WebAbout Press Copyright Contact us Creators Advertise Developers Terms Privacy Policy & Safety How YouTube works Test new features NFL Sunday Ticket Press Copyright ... Web13 de abr. de 2015 · In this work, we demonstrate a MoS 2 transistor with a low voltage and high ON/OFF ratio. A record small equivalent oxide thickness of ∼1.1 nm has been obtained by using ultra high- k gate dielectric Pb (Zr 0.52 Ti 0.48 )O 3. The low threshold voltage (<0.5 V) is comparable to that of the liquid/gel gated MoS 2 transistor.
IEEE Xplore - The effect of high-K gate dielectrics on deep ...
http://www.cityu.edu.hk/phy/appkchu/Publications/2010/10.35.pdf Web20 de mar. de 2024 · In this work, we demonstrate improved optical performance parameters of a suspended WSe 2 (p)-ReS 2 (n) heterostructure in comparison to its supported configuration. Fabrication and characterization of the supported and suspended architectures on the same bottom metal gate, dielectric (hBN), and WSe 2 –ReS 2 … csr new rules 2021
A native oxide high-κ gate dielectric for two-dimensional electronics ...
Web7 de fev. de 2024 · The threshold voltage roll-off and drain-induced-barrier-lowering (DIBL) have been explored. The effect of different device parameters like temperature, oxide thickness, film thickness, etc. on device performance has been evaluated to check the figure of merit over the DMDG structure. Web25 de jun. de 2007 · Double-Gate Tunnel FET With High- Gate Dielectric Abstract: In this paper, we propose and validate a novel design for a double-gate tunnel field-effect … WebWe study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent) of our devices induced by gate voltage when the system is in the insulating phase. The response is reversible … csr net worth